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| zener diode chips for esd protection WT-Z106N-AU4 1. feature: 2. structure: 3. size: 4. electrical characteristics (ta=25oc) 2-1 planar type: n/p diode 3-1 chip size: 6.88 mils x 6.88 mils (175 m x 175 m). 3-2 chip thickness: 3.3 0.6 mils (85 m 15 m). 3-3 active area: 4.1 mils x 4.1 mils (105 m x 105 m). 3-4 bonding pad: 4.5 mils x 4.5mils (115 m x 115 m). 3-5 pattern drawing: refer to the attached drawing. 2-2 1-1 silicon zener diode chips for electrostatic discharge (esd) protection application 1-2 this speci?cation applies to n-type silicon zener diode chip device no:WT-Z106N-AU4 weitron technology co., ltd. tel:886-2-29148158 fax:886-2-29106796 http://www.weitron.com.tw 24-nov-05 electrodes: top side:gold pad.(cathode) back side:gold layer.(anode) 5. drawing: p a r a m e t e r s y m b o l c o n d i t i o n min. t y p. ma x . unit v r =4 v 10 0 n a reverse leakage current i r zener voltage v z i z = 5 m a 5 . 7 - - - - - - - 6 . 7 v forward voltag e v f i f = 20m a 1 . 2 v electrostatic discharge esd hbm mil-std883 8 kv top side p - sub n bonding pa d back side
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